Room temperature nanocrystalline silicon single-electron transistors
نویسندگان
چکیده
منابع مشابه
Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors.
Single nanometre scale quantum dots (QDs) have significant potential for many 'beyond CMOS' nanoelectronics and quantum computation applications. The fabrication and measurement of few nanometre silicon point-contact QD single-electron transistors are reported, which both operate at room temperature (RT) and are fabricated using standard processes. By combining thin silicon-on-insulator wafers,...
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A single-electron memory, in which a bit of information is stored by one electron, is demonstrated at room temperature. The memory is a floating gate metal-oxide-semiconductor transistor in silicon with a channel width ( approximately 10 nanometers) smaller than the Debye screening length of a single electron and a nanoscale polysilicon dot ( approximately 7 nanometers by 7 nanometers) as the f...
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A single electron memory was demonstrated in crystalline silicon that has a transistor channel width of ;10 nm and a nanoscale floating gate of dimension ;~7 nm 3 7 nm 3 2 nm!, patterned by electron beam lithography, lift-off, and reactive ion etching. Quantized shift in the threshold voltage and self-limited charging process have been observed at room temperature. Analysis has shown that these...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2003
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1569994